Area-Selective Deposition and Surface Passivation
Area-selective deposition (ASD) is an emerging approach in advanced thin-film fabrication that enables the selective growth of materials on specific regions of a substrate while suppressing deposition on other surfaces. This technique has significant potential for enabling precise nanoscale patterning and simplifying conventional lithography-based processes in the fabrication of next-generation electronic, photonic, and energy-related devices.
This Master's thesis will investigate the principles and mechanisms underlying area-selective deposition, with particular emphasis on the role of surface chemistry and surface passivation in controlling selective film growth. The project will explore how surface properties, chemical functionalization, and deposition conditions influence the nucleation and growth of thin films on different substrate areas. Surface passivation strategies will be studied to inhibit unwanted deposition on non-growth regions while maintaining favorable conditions for deposition on the target areas.
Depending on the experimental scope, the work may involve thin-film deposition, surface characterization, and analysis of film nucleation and growth. The obtained results will be used to evaluate the effectiveness and limitations of different passivation approaches and to identify the key parameters governing deposition selectivity.
The overall objective of the thesis is to develop a better understanding of the relationship between surface chemistry, passivation, and selective thin-film growth, contributing to the development of reliable and scalable strategies for area-selective deposition in advanced device fabrication.
Type of internship: Master internship
Required educational background: Chemistry/Chemical Engineering, Nanoscience & Nanotechnology, Materials Engineering
Supervising scientist(s): For further information or for application, please contact Silvia Armini (< E-Mail aus Sicherheitsgründen gelöscht >)
The reference code for this position is 2026-INT-265. Mention this reference code in your application.
Applications should include the following information:
Incomplete applications will not be considered.
Area-selective deposition (ASD) is an emerging approach in advanced thin-film fabrication that enables the selective growth of materials on specific regions of a substrate while suppressing deposition on other surfaces. This technique has significant potential for enabling precise nanoscale patterning and simplifying conventional lithography-based processes in the fabrication of next-generation electronic, photonic, and energy-related devices.
This Master's thesis will investigate the principles and mechanisms underlying area-selective deposition, with particular emphasis on the role of surface chemistry and surface passivation in controlling selective film growth. The project will explore how surface properties, chemical functionalization, and deposition conditions influence the nucleation and growth of thin films on different substrate areas. Surface passivation strategies will be studied to inhibit unwanted deposition on non-growth regions while maintaining favorable conditions for deposition on the target areas.
Depending on the experimental scope, the work may involve thin-film deposition, surface characterization, and analysis of film nucleation and growth. The obtained results will be used to evaluate the effectiveness and limitations of different passivation approaches and to identify the key parameters governing deposition selectivity.
The overall objective of the thesis is to develop a better understanding of the relationship between surface chemistry, passivation, and selective thin-film growth, contributing to the development of reliable and scalable strategies for area-selective deposition in advanced device fabrication.
Type of internship: Master internship
Required educational background: Chemistry/Chemical Engineering, Nanoscience & Nanotechnology, Materials Engineering
Supervising scientist(s): For further information or for application, please contact Silvia Armini (< E-Mail aus Sicherheitsgründen gelöscht >)
The reference code for this position is 2026-INT-265. Mention this reference code in your application.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
