Development of Directed Self-Assembly Processes for Sub-30 nm Hexagonal Contact Hole Patterning

As semiconductor devices continue to scale, conventional lithography faces increasing challenges in achieving the required feature dimensions and pattern fidelity. Directed self-assembly (DSA) of block copolymers offers a promising route to extend patterning capabilities beyond the limits of traditional processes. In this project, the student will develop and optimize a process flow for the fabrication of sub-30 nm hexagonal contact hole arrays using DSA. The work will include process development, material evaluation, pattern characterization, and optimization of key metrics such as critical dimension uniformity, defectivity, and pattern placement accuracy. The project combines nanotechnology, materials science, and semiconductor process engineering.

Type of internship: Master internship, PhD internship

Duration: 1 year

Required educational background: Chemistry/Chemical Engineering, Nanoscience & Nanotechnology

University promotor: Stefan De Gendt (KU Leuven)

Supervising scientist(s): For further information or for application, please contact Lander Verstraete (< email supprimé pour raison de sécurité >) and Yejin Ku (< email supprimé pour raison de sécurité >)

The reference code for this position is 2026-INT-312. Mention this reference code in your application.

Only for self-supporting students.

Applications should include the following information:

• resume
• motivation
• current study

Incomplete applications will not be considered.