Two-dimensional semiconductors such as monolayer MoS₂ are leading candidates for transistor channels that could be co-integrated with silicon in beyond CMOS devices. In a channel only three atoms thick, every processing step counts: wet-chemical etching and passivation can remove material layer-selectively and heal defects without the sulfur vacancies that dry etching introduces, but they need atomic-scale control across the whole wafer. That control requires understanding what happens at the MoS₂/electrolyte interface, where light, band alignment and defect states decide whether a reagent passivates the layer or dissolves it.
In this project you will study the photoelectrochemistry of MOCVD-grown MoS₂ monolayers and link interfacial charge transfer to their optical and electronic properties. You will use electrochemistry under controlled illumination (LSV, EIS, Mott-Schottky) to map band energetics, XPS to follow surface composition and band alignment, and photoluminescence to probe doping and defect passivation. In-house ultra-trace-level ICP-MS lets you count dissolution down to a millionth of a monolayer. AFM, TEM, ERDA and electrical measurements are available to support the work.
You will join the imec's Surface and Interface Processing group in a multicultural and multidisciplinary environment. The insight you gain will feed directly into processes that device engineers use to build next-generation transistors.
Type of internship: Master internship
Duration: 6-12 months
Required educational background: Chemistry/Chemical Engineering, Physics
University promotor: Stefan De Gendt (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Dennis van Dorp (< email supprimé pour raison de sécurité >)
The reference code for this position is 2026-INT-337. Mention this reference code in your application.
Imec allowance will be provided for students studying at a non-Belgian university.
Applications should include the following information:
Incomplete applications will not be considered.
In this project you will study the photoelectrochemistry of MOCVD-grown MoS₂ monolayers and link interfacial charge transfer to their optical and electronic properties. You will use electrochemistry under controlled illumination (LSV, EIS, Mott-Schottky) to map band energetics, XPS to follow surface composition and band alignment, and photoluminescence to probe doping and defect passivation. In-house ultra-trace-level ICP-MS lets you count dissolution down to a millionth of a monolayer. AFM, TEM, ERDA and electrical measurements are available to support the work.
You will join the imec's Surface and Interface Processing group in a multicultural and multidisciplinary environment. The insight you gain will feed directly into processes that device engineers use to build next-generation transistors.
Type of internship: Master internship
Duration: 6-12 months
Required educational background: Chemistry/Chemical Engineering, Physics
University promotor: Stefan De Gendt (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Dennis van Dorp (< email supprimé pour raison de sécurité >)
The reference code for this position is 2026-INT-337. Mention this reference code in your application.
Imec allowance will be provided for students studying at a non-Belgian university.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
