In recent years, infrared imaging technologies have expanded rapidlyacross applications such as environmental monitoring, thermal imaging,industrial inspection, and security. In particular, the mid-wave infrared(MWIR) spectral range is highly relevant for these applications due to itssensitivity to thermal emissions and molecular signatures. Today'sstate-of-the-art MWIR detectors are typically based on III-V semiconductorssuch as InSb or HgCdTe, which offer excellent performance but are expensive andchallenging to integrate with standard CMOS technology.
As a group-IV material system, germanium-tin (GeSn) has emerged as apromising alternative for infrared photonics. By incorporating tin intogermanium, the bandgap can be engineered and extended into the MWIR range whilemaintaining compatibility with silicon-based fabrication platforms. Thisenables the development of cost-effective, scalable, and CMOS-compatiblephotodetectors. However, challenges remain in material growth, defect control,and device optimization to achieve high-performance MWIR detection.
The goal of this internship/master's thesis project is to explore anddevelop GeSn-based thin-film absorbers for MWIR photodetection. The projectwill focus on the fabrication and characterization of GeSn layers with tailoredcompositions and thicknesses to achieve the desired spectral response. Thecandidate will work on device integration, including photodetector fabricationand performance evaluation.
After an initial training period, the selected candidate will workindependently in a cleanroom and laboratory environment. The student will gainhands-on experience in semiconductor processing, as well as electrical andoptical characterization techniques. Experimental feedback will be used toiteratively optimize material quality and device performance. The candidatewill also be exposed to a broad range of structural and compositional analysismethods.
The work will be conducted within an international research team,providing continuous support and guidance. The ideal candidate is highlymotivated, enjoys hands-on experimental work, and has strong problem-solvingand data analysis skills. Given the international working environment, a goodcommand of English is required.
For more information or application, pleasecontactIsabelPintor (< email supprimé pour raison de sécurité >)
Type of internship: Master internship
Duration: 6-12 months
Required educational background: Materials Engineering, Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering, Chemistry/Chemical Engineering
University promotor: Jan Genoe (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Isabel Pintor Monroy (< email supprimé pour raison de sécurité >)
The reference code for this position is 2026-INT-204. Mention this reference code in your application.
Imec allowance will be provided for students studying at a non-Belgian university.
Applications should include the following information:
Incomplete applications will not be considered.
As a group-IV material system, germanium-tin (GeSn) has emerged as apromising alternative for infrared photonics. By incorporating tin intogermanium, the bandgap can be engineered and extended into the MWIR range whilemaintaining compatibility with silicon-based fabrication platforms. Thisenables the development of cost-effective, scalable, and CMOS-compatiblephotodetectors. However, challenges remain in material growth, defect control,and device optimization to achieve high-performance MWIR detection.
The goal of this internship/master's thesis project is to explore anddevelop GeSn-based thin-film absorbers for MWIR photodetection. The projectwill focus on the fabrication and characterization of GeSn layers with tailoredcompositions and thicknesses to achieve the desired spectral response. Thecandidate will work on device integration, including photodetector fabricationand performance evaluation.
After an initial training period, the selected candidate will workindependently in a cleanroom and laboratory environment. The student will gainhands-on experience in semiconductor processing, as well as electrical andoptical characterization techniques. Experimental feedback will be used toiteratively optimize material quality and device performance. The candidatewill also be exposed to a broad range of structural and compositional analysismethods.
The work will be conducted within an international research team,providing continuous support and guidance. The ideal candidate is highlymotivated, enjoys hands-on experimental work, and has strong problem-solvingand data analysis skills. Given the international working environment, a goodcommand of English is required.
For more information or application, pleasecontactIsabelPintor (< email supprimé pour raison de sécurité >)
Type of internship: Master internship
Duration: 6-12 months
Required educational background: Materials Engineering, Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering, Chemistry/Chemical Engineering
University promotor: Jan Genoe (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Isabel Pintor Monroy (< email supprimé pour raison de sécurité >)
The reference code for this position is 2026-INT-204. Mention this reference code in your application.
Imec allowance will be provided for students studying at a non-Belgian university.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
