Future photonic integrated circuits require optical modulators with high efficiency, low power consumption, and compact footprints. III-V semiconductor materials exhibit strong electro-optic effects and offer significant opportunities for realizing high-performance optical modulation devices. In this internship, the student will investigate the optical and electronic properties of III-V semiconductor heterostructures, with a particular focus on quantum-confined and heterojunction-based modulation mechanisms. Numerical simulations and data analysis will be carried out to study the influence of material composition, heterostructure design, strain engineering, and electric-field-induced effects on optical absorption and modulation efficiency. The results will contribute to the design and optimization of next-generation III-V photonic modulators for integrated optical communication systems.
Type of internship: Master internship
Duration: 6 months
Required educational background: Electrotechnics/Electrical Engineering, Physics
Supervising scientist(s): For further information or for application, please contact Mengxun Bai (< email supprimé pour raison de sécurité >)
The reference code for this position is 2026-INT-262. Mention this reference code in your application.
Imec allowance will be provided.
Applications should include the following information:
Incomplete applications will not be considered.
Type of internship: Master internship
Duration: 6 months
Required educational background: Electrotechnics/Electrical Engineering, Physics
Supervising scientist(s): For further information or for application, please contact Mengxun Bai (< email supprimé pour raison de sécurité >)
The reference code for this position is 2026-INT-262. Mention this reference code in your application.
Imec allowance will be provided.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
