Thegrowing demand for energy-efficient data storage and computing is driving thedevelopment of non-volatile memory technologies. Magnetic Random Access Memory(MRAM) is a promising candidate, combining non-volatility with fast operationand good scalability. Its basic element, the Magnetic Tunnel Junction (MTJ),consists of two ferromagnetic layers separated by an ultrathin insulatingbarrier, with information encoded in the magnetization state of the free layerand electrically read through the Tunnel Magnetoresistance (TMR) effect.
Differentmechanisms can be used to switch the free-layer magnetization. Spin-TransferTorque (STT) uses a spin-polarized current flowing through the MTJ and hasreached a high level of technological maturity. Spin-Orbit Torque (SOT) insteadgenerates the switching torque through a current flowing in an adjacent layer,separating the write and read paths. Despite their different implementations,both approaches rely on large current densities for magnetization switching,making write-energy reduction an important challenge for future MRAMtechnologies.
Voltage-controlledmagnetization switching offers an alternative route toward ultra-low-power MRAMby exploiting electric-field effects rather than relying primarily on largewrite currents. Different approaches have been explored, including magnetoelectricand magneto-ionic mechanisms. Among them, Voltage-Controlled MagneticAnisotropy (VCMA) is particularly attractive because it enables directelectrical modulation of magnetic anisotropy while remaining compatible withMTJ technology [1]. However, conventional VCMA switching still faces importantlimitations, particularly the need for symmetry breaking and the stringentpulse-timing requirements associated with precessional switching [1,2].
Atimec, we are developing novel device concepts and magnetic stack architecturesbased on VCMA, aiming to overcome some of the limitations of conventional VCMAdevices, particularly those related to precessional switching and externallyapplied magnetic fields.
Withinthis framework, the student will investigate novel magnetic stacks and devicesthrough electrical, magnetic, and material characterization. The experimentalwork will be complemented by micromagnetic modelling using tools such as OOMMFand MuMax3 to better understand the underlying magnetization dynamics andswitching mechanisms. Close collaboration with imec researchers working onmagnetic materials and devices will connect material properties, devicecharacteristics, and modelling toward the development of voltage-controlledMRAM.
Weare seeking a highly motivated candidate with a background in physics orengineering, a strong interest in experimental nanodevice research, and apassion for advancing next-generation memory and logic technologies, which aregaining significant momentum through European semiconductor initiatives such asthe European Chips Act [3].
References
Type of work: Literature study (10%), experimental work(70%), modelling (20%)
Type of internship: Master internship
Duration: 12 months
Required educational background: Physics, Materials Engineering, Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering
Supervising scientist(s): For further information or for application, please contact Daniele Narducci (< email slettet af sikkerhedsmæssige årsager >)
The reference code for this position is 2026-INT-351. Mention this reference code in your application.
Only for self-supporting students.
Applications should include the following information:
Incomplete applications will not be considered.
Differentmechanisms can be used to switch the free-layer magnetization. Spin-TransferTorque (STT) uses a spin-polarized current flowing through the MTJ and hasreached a high level of technological maturity. Spin-Orbit Torque (SOT) insteadgenerates the switching torque through a current flowing in an adjacent layer,separating the write and read paths. Despite their different implementations,both approaches rely on large current densities for magnetization switching,making write-energy reduction an important challenge for future MRAMtechnologies.
Voltage-controlledmagnetization switching offers an alternative route toward ultra-low-power MRAMby exploiting electric-field effects rather than relying primarily on largewrite currents. Different approaches have been explored, including magnetoelectricand magneto-ionic mechanisms. Among them, Voltage-Controlled MagneticAnisotropy (VCMA) is particularly attractive because it enables directelectrical modulation of magnetic anisotropy while remaining compatible withMTJ technology [1]. However, conventional VCMA switching still faces importantlimitations, particularly the need for symmetry breaking and the stringentpulse-timing requirements associated with precessional switching [1,2].
Atimec, we are developing novel device concepts and magnetic stack architecturesbased on VCMA, aiming to overcome some of the limitations of conventional VCMAdevices, particularly those related to precessional switching and externallyapplied magnetic fields.
Withinthis framework, the student will investigate novel magnetic stacks and devicesthrough electrical, magnetic, and material characterization. The experimentalwork will be complemented by micromagnetic modelling using tools such as OOMMFand MuMax3 to better understand the underlying magnetization dynamics andswitching mechanisms. Close collaboration with imec researchers working onmagnetic materials and devices will connect material properties, devicecharacteristics, and modelling toward the development of voltage-controlledMRAM.
Weare seeking a highly motivated candidate with a background in physics orengineering, a strong interest in experimental nanodevice research, and apassion for advancing next-generation memory and logic technologies, which aregaining significant momentum through European semiconductor initiatives such asthe European Chips Act [3].
References
- P. K. Mishra et al., "Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives," Journal of Applied Physics 135, 220701 (2024). [pubs.aip.org]
- H. Nakayama et al., "Static magnetization switching in an artificial antiferromagnetic multilayer driven by a voltage-controlled magnetic anisotropy effect," Nature Materials (2026), DOI: 10.1038/s41563-026-02575-w. [nature.com]
- NanoIC pilot line
Type of work: Literature study (10%), experimental work(70%), modelling (20%)
Type of internship: Master internship
Duration: 12 months
Required educational background: Physics, Materials Engineering, Nanoscience & Nanotechnology, Electrotechnics/Electrical Engineering
Supervising scientist(s): For further information or for application, please contact Daniele Narducci (< email slettet af sikkerhedsmæssige årsager >)
The reference code for this position is 2026-INT-351. Mention this reference code in your application.
Only for self-supporting students.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
