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Sub-30 nm sample preparation and limited-angle STEM tomography H/F

Stage 4 tot 6 maanden

Grenoble (France)

Gepubliceerd op 23 oktober 2026

  • Contract

    Stage 4 tot 6 maanden

  • Locatie

    Grenoble (France)

  • Startdatum

    November 2026

  • Loon

    Informatie niet verstrekt

  • Thuiswerken

    Niet gespecificeerd

CEA illustration
Position description

Category

Intrumentation, metrology and control

Contract

Internship

Job title

Sub-30 nm sample preparation and limited-angle STEM tomography H/F

Subject

Prepare sub-30-nm FIB lamellae and use limited-angle STEM tomography to reduce projection effects in nanoscale semiconductor devices.

Contract duration (months)

6

Job description

As semiconductor devices become smaller and more complex, structural information from 2D STEM images becomes harder to interpret because projection effects and overlapping features through conventional FIB lamellae can obscure nanoscale structures.

The internship will improve both sample preparation and STEM characterization. Lamellae thinner than 30 nm will be prepared using FIB milling followed by low-energy argon-ion polishing.

Limited-angle electron tomography will then reconstruct the central slice of the FIB lamella to reduce projection effects. The results will be compared with a full 3D volume reconstructed using deep-learning approaches.

Methods / Means

Electron microscopy (FIB-SEM, STEM), deep-learning approaches

Applicant Profile

Master 2 in materials science, physics or equivalent, with programming skills.

Position location

Site

Grenoble

Job location

France

Location

Grenoble

Candidate criteria

Prepared diploma

Bac+5 - Master 2

Recommended training

Materials science, physics

PhD opportunity

Oui

Requester

Position start date

01/03/2027

Uiterste sollicitatiedatum

Zolang de vacature online is

Opleidingsniveau

Master-niveau of gelijkwaardig

Jobdomeinen

Technologie

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