High-performance thin-film photodetectorsoperating across broadband spectral regimes are crucial building blocks fornext-generation technological applications, including machine vision,industrial automation, environmental sensing, and high-density imagingmatrices. While conventional lead-based halide perovskites have achievedremarkable external quantum efficiencies (EQE) at low operational biases,severe heavy-metal toxicity barriers and strict environmental regulationshinder their widespread commercial adoption in mainstream consumer electronicsfoundries. Consequently, developing environmentally friendly, lead-freealternative thin-film absorbers represents an urgent mandate for the imagesensor industry.
Our research group specializes in the synthesisand optimization of all-inorganic perovskite optoelectronic devices depositedentirely via multi-source dry-vacuum physical vapor deposition(co-evaporation). This completely solvent-free processing pipeline ensuressub-nanometer thickness control, superior structural purity, and cross-waferuniformity, matching the rigorous integration requirements of large-areasilicon electronics.
While our group has successfully establishedhigh-performance visible-light photodetectors using standard inorganic stacksutilizing symmetric carrier-selective transport layers, migrating thisarchitecture to newly developed lead-free light absorbers introduce distinctelectronic and interfacial challenges. Currently, vertical lead-free p-i-nphotodiode configurations face critical carrier collection barriers. Highbackground leakage currents in the dark narrow the photo-to-dark currentmodulation window, while non-radiative recombination at unpassivated interfacescaps the external quantum efficiency.
The objective of this Master'sthesis/internship project will be to systematically re-engineer theoptoelectronic device stack to suppress these parasitic leakage pathways andmaximize charge extraction efficiency. The selected candidate will focus on executingsystematic electrical, optical, and junction-capacitance measurements tobenchmark detector characteristics (including dark current density, spectralresponsivity, transient photoresponse, and trap states). Utilizing thisempirical data, the student will drive targeted process optimization loops torefine the structural and morphological quality of the active layer, alongsideexploring advanced device optimization strategies such as alternative transportbarriers and contact interfaces to passivate surface traps.
Following a short initial training period, thecandidate will be able to work independently in a state-of-the-art cleanroomfabrication facility and an advanced electro-optical characterizationlaboratory, managing device processing and testing from start to finish. Aninternational team of experienced researchers at imec will be present toprovide continuous support and technical guidance.
The ideal candidate is a highly motivated,hands-on individual in a laboratory environment with a strong foundationalbackground in solid-state device physics, photonics, or materials science,coupled with a proven record of analytical problem-solving and clean datainterpretation. Given the international and collaborative character of imec, anexcellent working knowledge of English is a prerequisite.
Type of internship: Master internship
Duration: 6-12 months
Required educational background: Electrotechnics/Electrical Engineering, Chemistry/Chemical Engineering, Energy, Materials Engineering, Nanoscience & Nanotechnology, Physics
University promotor: Jan Genoe (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Isabel Pintor Monroy (< email deleted for security reasons >) and Azahar Shaikh (< email deleted for security reasons >)
The reference code for this position is 2026-INT-205. Mention this reference code in your application.
Imec allowance will be provided for students studying at a non-Belgian university.
Applications should include the following information:
Incomplete applications will not be considered.
Our research group specializes in the synthesisand optimization of all-inorganic perovskite optoelectronic devices depositedentirely via multi-source dry-vacuum physical vapor deposition(co-evaporation). This completely solvent-free processing pipeline ensuressub-nanometer thickness control, superior structural purity, and cross-waferuniformity, matching the rigorous integration requirements of large-areasilicon electronics.
While our group has successfully establishedhigh-performance visible-light photodetectors using standard inorganic stacksutilizing symmetric carrier-selective transport layers, migrating thisarchitecture to newly developed lead-free light absorbers introduce distinctelectronic and interfacial challenges. Currently, vertical lead-free p-i-nphotodiode configurations face critical carrier collection barriers. Highbackground leakage currents in the dark narrow the photo-to-dark currentmodulation window, while non-radiative recombination at unpassivated interfacescaps the external quantum efficiency.
The objective of this Master'sthesis/internship project will be to systematically re-engineer theoptoelectronic device stack to suppress these parasitic leakage pathways andmaximize charge extraction efficiency. The selected candidate will focus on executingsystematic electrical, optical, and junction-capacitance measurements tobenchmark detector characteristics (including dark current density, spectralresponsivity, transient photoresponse, and trap states). Utilizing thisempirical data, the student will drive targeted process optimization loops torefine the structural and morphological quality of the active layer, alongsideexploring advanced device optimization strategies such as alternative transportbarriers and contact interfaces to passivate surface traps.
Following a short initial training period, thecandidate will be able to work independently in a state-of-the-art cleanroomfabrication facility and an advanced electro-optical characterizationlaboratory, managing device processing and testing from start to finish. Aninternational team of experienced researchers at imec will be present toprovide continuous support and technical guidance.
The ideal candidate is a highly motivated,hands-on individual in a laboratory environment with a strong foundationalbackground in solid-state device physics, photonics, or materials science,coupled with a proven record of analytical problem-solving and clean datainterpretation. Given the international and collaborative character of imec, anexcellent working knowledge of English is a prerequisite.
Type of internship: Master internship
Duration: 6-12 months
Required educational background: Electrotechnics/Electrical Engineering, Chemistry/Chemical Engineering, Energy, Materials Engineering, Nanoscience & Nanotechnology, Physics
University promotor: Jan Genoe (KU Leuven)
Supervising scientist(s): For further information or for application, please contact Isabel Pintor Monroy (< email deleted for security reasons >) and Azahar Shaikh (< email deleted for security reasons >)
The reference code for this position is 2026-INT-205. Mention this reference code in your application.
Imec allowance will be provided for students studying at a non-Belgian university.
Applications should include the following information:
- resume
- motivation
- current study
Incomplete applications will not be considered.
